Title :
Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
Author :
Terao, A. ; Flandre, D. ; Lora-Tamayo, E. ; Van de Wiele, Fernand
Author_Institution :
Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
Abstract :
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.<>
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; thin film transistors; voltage measurement; TFT; accumulation-mode PMOS/SOI transistors; back-gate voltages; conduction mechanisms; front-gate voltages; physical interpretation; threshold voltage measurement; Conductive films; Current measurement; FETs; MOSFETs; Region 2; Thin film devices; Thin film transistors; Threshold voltage; Time measurement; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
