Title :
Contactless DC Connector Based on GaN LLC Converter for Next-Generation Data Centers
Author :
Hayashi, Yusuke ; Toyoda, Hajime ; Ise, Toshifumi ; Matsumoto, Akira
Author_Institution :
Osaka Univ., Suita, Japan
Abstract :
An inductively coupled contactless dc connector has been proposed for the next-generation 380-V dc distribution system in data centers. A LLC resonant dc-dc converter topology with gallium nitride (GaN) power transistors has been applied to realize the short-distance highly efficient contactless power transfer. A prototype of a 1.2-kW 384- to 192-V connector has been fabricated and the conversion efficiency of over 95% with the power density of 8.1 W/cm3 has been confirmed experimentally under 1000-kHz operation. The design consideration has been carried out and the potential to achieve 10.0 W/cm3 has been also shown taking the feature of the GaN power device and the characteristics of the magnetic core material for the transformer into account. The contactless dc connector integrates the functioning of an isolated dc-dc converter into a connector for space saving, and the dc current can be cut off without arc because of the inductive coupling. The proposed connector contributes to realizing a highly efficient, space saving, and reliable future 380-V dc distribution system.
Keywords :
DC-DC power convertors; III-V semiconductors; LC circuits; computer centres; gallium compounds; inductive power transmission; magnetic cores; power transistors; wide band gap semiconductors; DC distribution system; GaN; GaN power device; LLC resonant DC-DC converter topology; contactless power transfer; inductive coupling; inductively coupled contactless DC connector; magnetic core material; next generation data centers; power 1.2 kW; power transistors; voltage 380 V; Connectors; Contacts; Density measurement; Gallium nitride; Inductance; Power system measurements; Topology; Contactless Power Supply; Contactless power supply; DC power distribution; DC–DC power converters; Gallium nitride; dc power distribution; dc???dc power converters; gallium nitride (GaN);
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2014.2387481