Title :
Measurement of very low tunneling current density in SiO/sub 2/ using the floating-gate technique
Author :
Fishbein, Bruce ; Krakauer, David ; Doyle, Brian
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
The floating-gate technique for measuring extremely low gate currents has been adapted to the measurement of Fowler-Nordheim tunneling currents in metal-oxide-semiconductor (MOS) capacitors. Using a special structure consisting of an MOS capacitor and a monitor transistor sharing a common-gate electrode, it has proved possible to measure tunneling current densities as low as 2*10/sup -13/ A/cm/sup 2/. The Fowler-Nordheim tunneling relationship was found to be obeyed over the entire measurable range of current density.<>
Keywords :
capacitors; electric current measurement; metal-insulator-semiconductor devices; silicon compounds; tunnelling; Fowler-Nordheim tunneling relationship; MOS capacitor; common-gate electrode; floating-gate technique; measurement of Fowler-Nordheim tunneling currents; measuring extremely low gate currents; monitor transistor; tunneling current densities; Current density; Current measurement; Density measurement; Dielectric measurements; Electrodes; Monitoring; Nonvolatile memory; Testing; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
