Title :
Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology
Author :
Nuo Xu ; Takeuchi, H. ; Damrongplasit, Nattapol ; Stephenson, Robert J. ; Xiangyang Huang ; Cody, Nyles W. ; Hytha, Marek ; Mears, Robert J. ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
An experimental and simulation study of short-channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolutionary approach to extend bulk MOSFET scaling.
Keywords :
MOSFET; doping profiles; logic circuits; low-power electronics; oxygen; low-power digital logic circuits; oxygen insertion technology; planar bulk n-channel MOSFET scaling; short channel planar bulk nMOSFET performance enhancement; CMOS integrated circuits; Doping; Educational institutions; Logic gates; MOSFET; MOSFET circuits; Silicon; Low-power (LP) logic circuits; mobility enhancement; oxygen insertion (OI); super-steep retrograde well (SSRW); variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2342496
