Title :
High-speed 1.3-µm LED transmitter using GaAs driver IC
Author :
Suzuki, Tomihiro ; Ebata, Toshiki ; Fukuda, Keiichi ; Hirakata, Noriyuki ; Yoshida, Kenichi ; Hayashi, Shigeo ; Takada, Hisashi ; Sugawa, Tsuyoshi
Author_Institution :
Sumitomo Electric Industries, Ltd., Shimaya, Konohana-ku, Osaka, Japan
fDate :
7/1/1986 12:00:00 AM
Abstract :
For an application to a high-speed LED driver, a shunt drive circuit which is eminently suitable for GaAs IC´s has been developed. This circuit has been embodied in a monolithic GaAs IC. A compact hybrid IC of an LED transmitter, i.e., a combination of this GaAs IC and a high-speed LED, has been fabricated. A high bit rate (NRZ 4000 M bit/s) transmission was demonstrated by using this LED transmitter.
Keywords :
FET integrated circuits; Gallium FETs; Integrated optoelectronics; Light-emitting diodes (LED´s); Application specific integrated circuits; Bit rate; Driver circuits; Gallium arsenide; High speed integrated circuits; Hybrid integrated circuits; Light emitting diodes; Monolithic integrated circuits; Optical signal processing; Transmitters;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1986.1074814
