Title :
Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon
Author :
Tan, Yaohua ; Li, Xiaojian ; Tian, Lilin ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
fDate :
6/1/2008 12:00:00 AM
Abstract :
It was experimentally and numerically indicated that both the valley splitting and effective-mass variation contribute to the stress-induced enhancement of electron mobility in the MOSFET channel. In this paper, an analytical electron-mobility model for arbitrarily strained silicon is presented. The electron-mobility model includes the strain effects of both the effective-mass variation and valley degeneration. The expression of strained conduction band used in the analytical model is based on the theory and accords well with numerical results of nonlocal empirical pseudopotential method (EPM). By using the mobility model, mobilities under different stresses are investigated.
Keywords :
MOSFET; electron mobility; elemental semiconductors; semiconductor device models; silicon; MOSFET channel; Si; arbitrarily stressed silicon; effective-mass variation contribute; electron-mobility model; nonlocal empirical pseudopotential method; strained conduction band; stress-induced enhancement; Analytical models; CMOS integrated circuits; CMOS technology; Capacitive sensors; Effective mass; Electron mobility; MOSFET circuits; Semiconductor device modeling; Silicon; Stress; $k cdot p$; $k cdot p$; Effective mass; electron-mobility model; empirical nonlocal pseudopotential;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.921074
