Title :
Mg-doped graded base GaAs/AlGaAs heterojunction bipolar transistors grown by metalorganic vapour phase epitaxy
Author :
Tews, H. ; Zwicknagl, P. ; Neumann, Robert ; Jaeger, G. ; Hoepfner, A. ; Schleicher, L. ; Packeiser, G.
Author_Institution :
Siemens Res. Labs., Munich, West Germany
Abstract :
GaAs/AlGaAs heterojunction bipolar transistors with Mg-doped graded base have been realised by metalorganic vapour phase epitaxy. Current gains above 70 and transit frequencies of 20 GHz are achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; magnesium; semiconductor technology; solid-state microwave devices; vapour phase epitaxial growth; 20 GHz; Al xGa 1-xAs:Mg graded base; GaAs-AlGaAs; HBT; MOVPE; current gain; heterojunction bipolar transistors; metalorganic vapour phase epitaxy; semiconductors; transit frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900038
