Title :
Double-barrier resonant tunnelling diode three-state logic
Author :
Sellai, A. ; Raven, M.S. ; Steenson, D.P. ; Chamberlain, J.M. ; Hinini, M. ; Hughes, D.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Abstract :
Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.
Keywords :
III-V semiconductors; aluminium compounds; flip-flops; gallium arsenide; logic circuits; ternary logic; tunnel diodes; GaAs-AlGaAs; OR gates; double-barrier resonant tunnelling diode; flip-flops; inverters; semiconductors; three-state logic; three-state logic circuits; three-state logic operations; waveforms;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900040
