Title :
Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavity surface-emitting laser diode on Si substrate
Author :
Egawa, T. ; Hasegawa, Y. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
fDate :
6/1/1994 12:00:00 AM
Abstract :
Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode (VCSELD) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on Si substrate consists of a single quantum well active layer and a 20-pair of AlAs/GaAs distributed Bragg reflector (DBR). The measured reflectivity of the 20-pair of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSELD on Si substrate exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm/sup 2/ under pulsed condition at room temperature.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; elemental semiconductors; gallium arsenide; laser cavity resonators; reflectivity; semiconductor growth; semiconductor lasers; silicon; substrates; vapour phase epitaxial growth; 79 mA; 860 nm; AlAs-GaAs; AlAs/GaAs distributed Bragg reflector; AlGaAs-GaAs; Si; Si substrate; metalorganic chemical vapor deposition; pulsed condition; room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode; single quantum well active layer; threshold current density; Chemical vapor deposition; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Optical pulses; Pulsed laser deposition; Reflectivity; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
