Title :
High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers
Author :
Siala, Sabeur ; Zhao, Hanmin ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.<>
Keywords :
electro-optical devices; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; internal stresses; optical communication equipment; optical interconnections; semiconductor lasers; 1 Gbit/s; 27 percent; InGaAs-GaAs; bit-error-rate; high-speed large-signal digital modulation; input signal swing; modulation depth; modulation efficiency; modulation response; monolithically integrated intracavity modulators; simple emitter-follower; single NPN transistor; strained InGaAs/GaAs single quantum well lasers; three-terminal low-threshold strained InGaAs/GaAs lasers; ultrabroad-band optical interconnection applications; voltage controlled intracavity modulator; Anodes; Digital modulation; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical devices; Optical modulation; Power semiconductor switches; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
