Title :
High power performance of asymmetric Fabry-Perot MQW modulators
Author :
Mottahedeh, R. ; Parry, G. ; Whitehead, M. ; Roberts, J.S. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
6/1/1994 12:00:00 AM
Abstract :
We have demonstrated experimentally that a normally-on surface normal asymmetric Fabry-Perot modulator can still operate at high optical powers (equivalent to intensities of >20 kW/cm/sup 2/). We have identified two distinct operating regimes: one thermally assisted regime where the maximum reflection change increases at high powers and peak values of 75% are achieved, and one nonthermal regime where reflection changes approaching 55% are achieved albeit at higher applied voltages.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-AlGaAs; applied voltages; asymmetric Fabry-Perot MQW modulators; high optical powers; high power performance; high powers; maximum reflection change; nonthermal regime; normally-on surface normal asymmetric Fabry-Perot modulator; operating regimes; peak values; thermally assisted regime; Fabry-Perot; Gallium arsenide; Intensity modulation; Optical buffering; Optical modulation; Optical reflection; Photonics; Quantum well devices; Reflectivity; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
