High power performance of asymmetric Fabry-Perot MQW modulators

Author

Mottahedeh, R. ; Parry, G. ; Whitehead, M. ; Roberts, J.S. ; Button, C.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

6

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

703

Lastpage

705

Abstract

We have demonstrated experimentally that a normally-on surface normal asymmetric Fabry-Perot modulator can still operate at high optical powers (equivalent to intensities of >20 kW/cm/sup 2/). We have identified two distinct operating regimes: one thermally assisted regime where the maximum reflection change increases at high powers and peak values of 75% are achieved, and one nonthermal regime where reflection changes approaching 55% are achieved albeit at higher applied voltages.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-AlGaAs; applied voltages; asymmetric Fabry-Perot MQW modulators; high optical powers; high power performance; high powers; maximum reflection change; nonthermal regime; normally-on surface normal asymmetric Fabry-Perot modulator; operating regimes; peak values; thermally assisted regime; Fabry-Perot; Gallium arsenide; Intensity modulation; Optical buffering; Optical modulation; Optical reflection; Photonics; Quantum well devices; Reflectivity; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.300168

Filename

300168