Fluidic self-assembly for the integration of GaAs light-emitting diodes on Si substrates

Author

Yeh, Hsi-Jen J. ; Smith, John S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

6

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

706

Lastpage

708

Abstract

The integration of GaAs optoelectronic devices on Si VLSI is important for many high-bandwidth communication applications. In this paper we describe a novel technique for the quasi-monolithic integration of GaAs light-emitting diodes on Si substrates that utilizes fluid transport and shape differentiation for placement and orientation. GaAs light-emitting diodes fabricated into trapezoidal blocks are suspended in a carrier fluid and deposited over holes etched in Si for integration. Top-side ring contact and bottom electrical contact are fabricated on the blocks prior to integration.<>

Keywords

III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; light emitting diodes; optical communication equipment; optical workshop techniques; GaAs; GaAs light-emitting diodes; GaAs optoelectronic devices; LED; Si; Si VLSI; Si substrates; bottom electrical contact; carrier fluid; etched; fluid transport; fluidic self-assembly; high-bandwidth communication applications; integration; orientation; placement; quasi-monolithic integration; shape differentiation; top-side ring contact; trapezoidal blocks; Anisotropic magnetoresistance; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Self-assembly; Shape; Sputter etching; Substrates; Very large scale integration; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.300169

Filename

300169