Title :
Optoelectronic exclusive-NOR gate operating at 200 mbit/s
Author :
She, T.C. ; Shu, C.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
fDate :
6/1/1994 12:00:00 AM
Abstract :
An optoelectronic exclusive-NOR gate was demonstrated for the first time. The device consisted of a composite pair of GaAs metal-semiconductor-metal photodetectors. Special input pulse trains were constructed from a 0.83 μm laser diode to test its functionality. Output electrical signal shorter than 800 ps was achieved. On-off contrast ratio of 6.2 dB was obtained with an incident pulse energy below 100 fJ. The device is useful in bit pattern matching for optical signal processing and optical computing.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; metal-semiconductor-metal structures; optical logic; photodetectors; 0.83 micron; 100 fJ; 200 Mbit/s; 800 ps; GaAs; GaAs metal-semiconductor-metal photodetectors; bit pattern matching; laser diode; on-off contrast ratio; optical computing; optical signal processing; optoelectronic exclusive-NOR gate; pulse trains; Circuits; Diode lasers; Gallium arsenide; High speed optical techniques; Logic functions; Optical devices; Optical pulses; Optical signal processing; Photodetectors; Phototransistors;
Journal_Title :
Photonics Technology Letters, IEEE
