Title :
110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelength
Author :
Kato, Kazuhiko ; Kozen, A. ; Muramoto, Y. ; Itaya, Y. ; Nagatsuma, T. ; Yaita, M.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/1/1994 12:00:00 AM
Abstract :
A mushroom-mesa structure is proposed to reduce the CR-time constant which originates from the waveguide photodiode structure. Experimental results at a 1.55-μm wavelength show that the multimode waveguide p-i-n photodiode with mushroom-mesa structure has an electrical 3-dB bandwidth of more than 75 GHz in the frequency domain and an electrical 3-dB bandwidth of 110 GHz in the time domain. The external quantum efficiency is 50% or 0.63 A/W, which leads to a record bandwidth-efficiency product of 55 GHz for long wavelength p-i-n photodetectors.
Keywords :
infrared detectors; integrated optoelectronics; optical waveguides; p-i-n photodiodes; 1.55 micron; 110 GHz; 50 percent; 75 GHz; CR-time constant; bandwidth-efficiency product; electrical bandwidth; external quantum efficiency; frequency domain; long wavelength photodetectors; multimode waveguide p-i-n photodiode; mushroom-mesa; time domain; Bandwidth; Capacitance; Contact resistance; Frequency; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical surface waves; Optical waveguides; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
