DocumentCode :
1128717
Title :
Effects of TE-TM mode kinks on the performance of semiconductor lasers in lightwave communication systems
Author :
Shen, T.M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume :
4
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1420
Lastpage :
1424
Abstract :
Effects of kinks in 1.3-μm InGaAsP etch-mesa-buried-heterostructure lasers on their performance in lightwave communications systems are studied through bit-error rate measurements. These kinks are due to the onset of TM modes in the light emission. Noise associated with kinks is observed when the lasers are operated above the kink region. This noise associated with kinks leads to a noise floor in the bit-error rate curves. The magnitude of the noise associated with these kinks is deduced by fitting the experimental bit-error-rate curves using computer simulations.
Keywords :
Gallium materials/lasers; Laser noise; Optical fiber transmitters, lasers; Bit error rate; Etching; Fiber lasers; Laser modes; Laser noise; Lasers and electrooptics; Optical attenuators; Optical fiber polarization; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1986.1074903
Filename :
1074903
Link To Document :
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