• DocumentCode
    1128771
  • Title

    Stimulated emission from Ga1-xAlxAs diodes at 77°K

  • Author

    Rupprecht, H. ; Woodall, J. ; Pettit, G. ; Crowe, J. ; Quinn, Heather

  • Author_Institution
    IBM Watson Research Center, Yorktown Heights, NY, USA
  • Volume
    4
  • Issue
    1
  • fYear
    1968
  • fDate
    1/1/1968 12:00:00 AM
  • Firstpage
    35
  • Lastpage
    35
  • Abstract
    Ga1-xAlxAs was found to be a suitable material for semiconductor lasers. Stimulated emission from Fabry-Perot type of diodes has been observed at 77°K and 273°K. The highest peak energy of the laser line at 77°K so far is 1.65 eV ( l = 7500 Å). The Ga1-xAlxAs material was obtained by a liquid phase epitaxial method, described in a previous paper.
  • Keywords
    Bandwidth; Electrooptic modulators; Fabry-Perot; Frequency synchronization; Optical materials; Optical modulation; Semiconductor diodes; Semiconductor materials; Stimulated emission; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1968.1074909
  • Filename
    1074909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1128771