DocumentCode :
1128833
Title :
High-Performance Multipulse Rectifier With Single-Transistor Active Injection
Author :
Araujo-Vargas, Ismael ; Forsyth, Andrew J. ; Chivite-Zabalza, F. Javier
Author_Institution :
Univ. of Manchester, Manchester
Volume :
23
Issue :
3
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
1299
Lastpage :
1308
Abstract :
A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented.
Keywords :
MOSFET; rectifying circuits; 12-pulse rectifier; MOSFET device; active voltage injection; high-performance multipulse rectifier; multilevel pulsewidth-modulated operation; multilevel rectifier; single-transistor active injection; High-power factor rectification; three-phase multipulse rectifier;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2008.920882
Filename :
4488222
Link To Document :
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