DocumentCode :
112938
Title :
Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/s) and Low-Energy Consumption Operation
Author :
Kai-Lun Chi ; Jia-Liang Yen ; Jhih-Min Wun ; Jia-Wei Jiang ; I-Cheng Lu ; Chen, Jason ; Ying-Jay Yang ; Jin-Wei Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume :
21
Issue :
6
fYear :
2015
fDate :
Nov.-Dec. 2015
Firstpage :
1
Lastpage :
10
Abstract :
The strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 °C), as well as lower the required driving current density performance of oxide-relief 850-nm vertical-cavity surface-emitting lasers (VCSELs) for >40 Gbit/s operation. By increasing the wavelength detuning from 15 to 20 nm, a significant improvement in the electrical-to-optical (E-O) bandwidth (20 to 27 GHz) of the VCSEL can be observed. This detuning design (~20 nm) is incorporated along with a Zn-diffusion structure into our oxide-relief VCSEL with a miniaturized oxide-relief aperture (~3 μm). Highly single-mode, high-speed (26 GHz) operation, and moderate differential resistance (100 Ω) values can be simultaneously achieved. In addition, it is found that devices with a further larger detuning wavelength (>20 nm) and enlarged oxide-relief apertures (~8 μm) can sustain the same maximum E-O bandwidth (26 GHz) as that of a miniaturized (~3 μm) VCSEL, resulting in the lower driving current density (8 versus 18.8 kA/cm2) required for high-speed performance. Excellent transmission performance, which includes an extremely low energy-to-data rate ratio (EDR: 228 fJ/bit; over 100 m OM4 fiber) and record-low driving-current density (8 kA/cm2; 3.5 mA) has been successfully achieved for 41 Gbit/s error-free transmission for these VCSELs.
Keywords :
current density; electrical resistivity; laser cavity resonators; laser modes; optical modulation; quantum well lasers; surface emitting lasers; OM4 fiber; Zn-diffusion structure; bit rate 41 Gbit/s; detuning design; differential resistance; driving current density performance; electrical-optical bandwidth; energy-data rate ratio; error-free transmission; high-temperature characteristics; low-energy consumption operation; miniaturized oxide-relief aperture; modulation speed; oxide-relief VCSEL; oxide-relief vertical-cavity surface-emitting lasers; single-mode high-speed operation; temperature 85 degC; wavelength 850 nm; wavelength detuning; Apertures; Bandwidth; Current measurement; Frequency measurement; Performance evaluation; Resistance; Vertical cavity surface emitting lasers; Semiconductor lasers; Vertical cavity surface emitting lasers; vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2015.2451015
Filename :
7140745
Link To Document :
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