DocumentCode :
1129779
Title :
Near-infrared optical upconverter based on i-In0.53Ga0.47As/C60 photovoltaic heterojunction
Author :
Chen, Jiann-Jong ; Ban, D. ; Helander, M.G. ; Lu, Zhi ; Graf, M. ; SpringThorpe, A.J. ; Liu, H.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
Volume :
45
Issue :
14
fYear :
2009
Firstpage :
753
Lastpage :
755
Abstract :
A near-infrared to visible light optical upconverter by the integration of an i-In0.53Ga0.47As/C60 junction and an organic light emitting diode is reported. This device shows the photovoltaic effect of an i-In0.53Ga0.47As/C60 heterojunction and potential application in a pixelless upconversion imaging device.
Keywords :
fullerenes; gallium arsenide; indium compounds; light emitting diodes; optical frequency conversion; photovoltaic effects; semiconductor heterojunctions; In0.53Ga0.47As-C60; near-infrared optical upconverter; organic light emitting diode; photovoltaic effect; photovoltaic heterojunction; pixelless upconversion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.3592
Filename :
5159727
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1129779
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