Title :
Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laser
Author :
Sharfin, W.F. ; Schlafer, J. ; Koteles, E.S.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
The beat spectra between the adjacent modes of a semiconductor laser having no external cavity are reported. Passive beat-frequency locking is observed at high power without a saturable absorber. This self-induced locking is manifested by the dramatic narrowing (by four orders of magnitude) of the beat spectrum between the dominant and adjacent modes. It is accompanied by the transition from nearly single-mode behavior to a highly structured multifrequency optical spectrum
Keywords :
laser mode locking; semiconductor lasers; adjacent modes; beat spectra; dominant modes; highly structured multifrequency optical spectrum; mode beating; passive beat-frequency locking; self-frequency locking; self-induced locking; single-mode semiconductor laser; transition; Frequency measurement; Gallium arsenide; Gas lasers; Laser mode locking; Laser modes; Laser theory; Laser transitions; Nonlinear optics; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of