DocumentCode :
1129802
Title :
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Author :
Diduck, Quentin ; Felbinger, Jonathan ; Eastman, L.F. ; Francis, Daniel ; Wasserbauer, J. ; Faili, F. ; Babic, D.I. ; Ejeckam, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Volume :
45
Issue :
14
fYear :
2009
Firstpage :
758
Lastpage :
759
Abstract :
The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG =40 nm and a periphery WG = 100 mum that exhibits fT = 85 GHz and fmax = 95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; C; HEMT; diamond substrate; frequency performance; gate footprint; high electron mobility transistor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1122
Filename :
5159730
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1129802
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