• DocumentCode
    1129892
  • Title

    Static Friction in Polysilicon Surface Micromachines

  • Author

    Lumbantobing, Ari ; Komvopoulos, Kyriakos

  • Author_Institution
    Dept. of Mech. Eng., Univ. of California, Berkeley, CA, USA
  • Volume
    14
  • Issue
    4
  • fYear
    2005
  • Firstpage
    651
  • Lastpage
    663
  • Abstract
    Surface micromachines of polycrystalline silicon were used to investigate the dependence of static friction in microelectromechanical systems on the external load, apparent contact area, and environmental conditions. An analytical model of the micromachine at the inception of sliding was used to determine the normal load consisting of the restoring and levitation forces exerted by the micromachine\´s comb-drive actuators. The apparent shear strength at the contact interface(s) exhibited a nonlinear dependence on the apparent contact pressure. Relatively higher static coefficient of friction and interfacial shear strength were obtained in room air than vacuum ambient. The static coefficient of friction was found to depend on the normal load, apparent contact area, and ambient conditions (i.e., relative humidity). Electrical contact resistance measurements indicated that sliding in room air promoted thickening of the native oxide film at asperity contacts. The experimental evidence suggests that modification of the surface topography occurred at the asperity level. However, these submicroscopic changes in the surface topography did not affect the overall static friction behavior, for the test cycles simulated in the friction experiments. \\hfill \\hbox {[1225]}
  • Keywords
    micromechanical devices; shear strength; silicon; sliding friction; stiction; surface topography; analytical model; asperity contacts; comb-drive actuators; contact interface; contact pressure; electrical contact resistance measurements; interfacial shear strength; levitation forces; micro-electromechanical systems; oxide film; polycrystalline silicon; polysilicon surface micromachines; relative humidity; static friction; submicroscopic changes; surface topography; Actuators; Analytical models; Contacts; Friction; Humidity; Levitation; Microelectromechanical systems; Silicon; Surface resistance; Surface topography; Contact interfaces; contact pressure; microelectromechanical devices; oxide film; polycrystalline silicon; relative humidity; static friction;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2005.850719
  • Filename
    1492416