Mechanical Properties of Epitaxial 3C Silicon Carbide Thin Films

Author

Jackson, Kamili M. ; Dunning, Jeremy ; Zorman, Christian A. ; Mehregany, Mehran ; Sharpe, William N., Jr.

Author_Institution

Johns Hopkins Univ., Baltimore, MD, USA

Volume

14

Issue

4

fYear

2005

Firstpage

664

Lastpage

672

Abstract

Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of strength and elastic modulus. Samples were fabricated using both micromolding and reactive ion etching (RIE) processes to pattern the 3C-SiC films. All specimens were on the

Keywords

elastic moduli measurement; moulding; semiconductor epitaxial layers; silicon compounds; sputter etching; tensile testing; wide band gap semiconductors; 0.5 to 2 micron; 3C silicon carbide thin films; 4 mm; 600 micron; SiC-Si; ab initio calculations; elastic modulus; epitaxial thin films; mechanical properties; micromolding process; microsample tensile testing; reactive ion etching; single crystal elastic constants; strength measurement; Anisotropic magnetoresistance; Crystalline materials; Etching; Materials testing; Mechanical factors; Mechanical variables measurement; Semiconductor thin films; Silicon carbide; Substrates; Transistors; 3C silicon carbide (3C-SiC); mechanical properties; microfabrication; tensile testing;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2005.847933

Filename

1492417