DocumentCode
1129939
Title
Optical losses and efficiency in GaAs laser diodes
Author
Susaki, Wataru ; Oku, Taiji ; Sogo, T.
Author_Institution
Mitsubishi Electric Corporation, Hyogo, Japan
Volume
4
Issue
4
fYear
1968
fDate
4/1/1968 12:00:00 AM
Firstpage
122
Lastpage
125
Abstract
Optical gain and losses of GaAs laser diodes were deduced from the length dependence of the threshold current density and the differential external quantum efficiency at 77 and 300°K. It has been confirmed that the optical gain is proportional to the threshold current density Jt ; and the optical losses are given by the sum of current independent term
, and current dependent term
, which is proportional to the threshold current density. The term
depends on the laser wavelength because the threshold current density depends on the laser wavelength. It is believed that
is caused by the penetration of the laser oscillations into the noninverted regions surrounding the inverted population region of the
junction.
, and current dependent term
, which is proportional to the threshold current density. The term
depends on the laser wavelength because the threshold current density depends on the laser wavelength. It is believed that
is caused by the penetration of the laser oscillations into the noninverted regions surrounding the inverted population region of the
junction.Keywords
Current density; Diode lasers; Electrons; Gain measurement; Gallium arsenide; Loss measurement; Optical losses; P-n junctions; Tellurium; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1968.1075039
Filename
1075039
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