• DocumentCode
    1129939
  • Title

    Optical losses and efficiency in GaAs laser diodes

  • Author

    Susaki, Wataru ; Oku, Taiji ; Sogo, T.

  • Author_Institution
    Mitsubishi Electric Corporation, Hyogo, Japan
  • Volume
    4
  • Issue
    4
  • fYear
    1968
  • fDate
    4/1/1968 12:00:00 AM
  • Firstpage
    122
  • Lastpage
    125
  • Abstract
    Optical gain and losses of GaAs laser diodes were deduced from the length dependence of the threshold current density and the differential external quantum efficiency at 77 and 300°K. It has been confirmed that the optical gain is proportional to the threshold current density Jt; and the optical losses are given by the sum of current independent term \\alpha _{0}\´ , and current dependent term \\beta , which is proportional to the threshold current density. The term \\beta depends on the laser wavelength because the threshold current density depends on the laser wavelength. It is believed that \\beta is caused by the penetration of the laser oscillations into the noninverted regions surrounding the inverted population region of the p-n junction.
  • Keywords
    Current density; Diode lasers; Electrons; Gain measurement; Gallium arsenide; Loss measurement; Optical losses; P-n junctions; Tellurium; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1968.1075039
  • Filename
    1075039