DocumentCode
1129947
Title
A Single-Crystal Silicon Symmetrical and Decoupled MEMS Gyroscope on an Insulating Substrate
Author
Alper, Said Emre ; Akin, Tayfun
Author_Institution
Dept. of Electr. & Electron. Eng., Middle East Tech. Univ., Ankara, Turkey
Volume
14
Issue
4
fYear
2005
Firstpage
707
Lastpage
717
Abstract
This paper presents a single-crystal silicon symmetrical and decoupled (SYMDEC) gyroscope implemented using the dissolved wafer microelectromechanical systems (MEMS) process on an insulating substrate. The symmetric structure allows matched resonant frequencies for the drive and sense vibration modes for high-rate sensitivity and low temperature-dependent drift, while the decoupled drive and sense modes prevents unstable operation due to mechanical coupling, achieving low bias-drift. The 12–15-
-thick single-crystal silicon structural layer with an aspect ratio of about 10 using DRIE patterning provides a high sense capacitance of 130 fF, while the insulating substrate provides a low parasitic capacitance of only 20 fF. A capacitive interface circuit fabricated in a 0.8-
CMOS process and having a sensitivity of 33 mV/fF is hybrid connected to the gyroscope. Drive and sense mode resonance frequencies of the gyroscope are measured to be 40.65 and 41.25 kHz, respectively, and their measured variations with temperature are
and
, respectively, in
to
temperature range. Initial tests show a rate resolution around 0.56 deg/s with slightly mismatched modes, which reveal that the gyroscope can provide a rate resolution of 0.030 deg/s in 50-Hz bandwidth at atmospheric pressure and 0.017 deg/s in 50-Hz bandwidth at vacuum operation with matched modes. ![\\hfill \\hbox {[1195]}](/images/tex/14973.gif)
-thick single-crystal silicon structural layer with an aspect ratio of about 10 using DRIE patterning provides a high sense capacitance of 130 fF, while the insulating substrate provides a low parasitic capacitance of only 20 fF. A capacitive interface circuit fabricated in a 0.8-
CMOS process and having a sensitivity of 33 mV/fF is hybrid connected to the gyroscope. Drive and sense mode resonance frequencies of the gyroscope are measured to be 40.65 and 41.25 kHz, respectively, and their measured variations with temperature are
and
, respectively, in
to
temperature range. Initial tests show a rate resolution around 0.56 deg/s with slightly mismatched modes, which reveal that the gyroscope can provide a rate resolution of 0.030 deg/s in 50-Hz bandwidth at atmospheric pressure and 0.017 deg/s in 50-Hz bandwidth at vacuum operation with matched modes. ![\\hfill \\hbox {[1195]}](/images/tex/14973.gif)
Keywords
gyroscopes; micromechanical devices; sputter etching; -40 to 85 C; 0.8 micron; 130 fF; 20 fF; 40.65 KHz; 41.25 KHz; 50 Hz; CMOS process; DRIE patterning; MEMS gyroscope; capacitive interface circuit; decoupled drive; dissolved wafer process; insulating substrate; matched resonant frequencies; mechanical coupling; microelectromechanical systems; single-crystal silicon symmetrical and decoupled gyroscope; Bandwidth; Frequency measurement; Gyroscopes; Insulation; Micromechanical devices; Parasitic capacitance; Resonant frequency; Silicon; Temperature distribution; Temperature measurement; Capacitive interface; MEMS gyroscope; decoupled gyroscope; dissolved wafer process;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2005.845400
Filename
1492422
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