Title :
Recombination lifetime in a semiconductor laser diode
Author :
Nishizawa, Jun-ichi
Author_Institution :
Tohoku University, Sendai, Japan
fDate :
4/1/1968 12:00:00 AM
Abstract :
The effect of minority carrier lifetime on the impedance of the laser within a diffusion or a drift length from the junction is analyzed. Lifetime shorting due to stimulated recombination (which is a function of the injection current) is considered and the effect of cavity size on the ability to modulate the laser at high frequencies is pointed out.
Keywords :
Charge carrier lifetime; Diode lasers; Equations; Gallium arsenide; Impedance; Life estimation; Lifetime estimation; Optical materials; Radiative recombination; Semiconductor diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1968.1075058
