• DocumentCode
    1130127
  • Title

    Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctions

  • Author

    Winogradoff, N.W. ; Neill, A.H., Jr.

  • Author_Institution
    Electron Devices Section, National Bureau of Standards, Washington, D.C., USA
  • Volume
    4
  • Issue
    4
  • fYear
    1968
  • fDate
    4/1/1968 12:00:00 AM
  • Firstpage
    111
  • Lastpage
    113
  • Abstract
    The temperature dependence of the spectrum, threshold current, and power output of compensated vapor-grown epitaxial GaAs lasers and incoherent emitters near room temperature is presented. It was found that an increase in temperature produced a narrowing of the spontaneous emission spectrum. This narrowing has been attributed to a movement of the Fermi level through an exponential density-of-states tail.
  • Keywords
    Absorption; Diodes; Gallium arsenide; Photonic band gap; Power lasers; Probability distribution; Radiative recombination; Semiconductor materials; Spontaneous emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1968.1075060
  • Filename
    1075060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1130127