DocumentCode
1130197
Title
Notching Effect on Metal Etch: A Very Simple Predictive Model
Author
Garozzo, Giuseppe ; Beffumo, Fabio ; La Magna, Antonino
Author_Institution
Central Res. & Dev., STMicroelectronics, Catania, Italy
Volume
18
Issue
3
fYear
2005
Firstpage
355
Lastpage
358
Abstract
In this paper, a very simple model of notching effect is reported. From an engineering point of view, the notching effect is an undercut between bottom of metal strip and stop layer (generally oxide) which can be observed in a
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metal etch when the geometry is shrunk. Starting from (Horwitz, 1993), a very detailed relation between geometrical decreasing , ion beam isotropy increasing, and sheath voltage was proposed. Then, a set of experiments performed on patterned aluminum wafers etched in a transformed coupled plasma (TCP) reactor were carried out in order to support the model based on sheath field curvature around metal lines. The experimental results are in good agreement with the theoretical predictions. This confirms the reliability of model proposed in order to manage the engineering problems which take place when a scaling down is performed.
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metal etch when the geometry is shrunk. Starting from (Horwitz, 1993), a very detailed relation between geometrical decreasing , ion beam isotropy increasing, and sheath voltage was proposed. Then, a set of experiments performed on patterned aluminum wafers etched in a transformed coupled plasma (TCP) reactor were carried out in order to support the model based on sheath field curvature around metal lines. The experimental results are in good agreement with the theoretical predictions. This confirms the reliability of model proposed in order to manage the engineering problems which take place when a scaling down is performed.Keywords
boron compounds; etching; lithography; notch strength; resists; Cl2-BCl3; metal etch; notching effect; predictive model; sheath field curvature; sheath voltage; transformed coupled plasma reactor; Aluminum; Etching; Geometry; Ion beams; Plasma applications; Plasma sheaths; Predictive models; Semiconductor device modeling; Strips; Voltage; Metal etch; notching effect; resist consumption; sheath voltage;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2005.852096
Filename
1492450
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