DocumentCode :
1130217
Title :
On the Wafer/Pad Friction of Chemical–Mechanical Planarization (CMP) Processes—Part II: Experiments and Applications
Author :
Yi, Jingang
Author_Institution :
Lam Res. Corp., Fremont, CA, USA
Volume :
18
Issue :
3
fYear :
2005
Firstpage :
371
Lastpage :
383
Abstract :
This paper presents the experimental validation and some application examples of the proposed wafer/pad friction models for linear chemical–mechanical planarization (CMP) processes in the companion paper. An experimental setup of a linear CMP polisher is first presented and some polishing processes are then designed for validation of the wafer/pad friction modeling and analysis. The friction torques of both the polisher spindle and roller systems are used to monitor variations of the friction coefficient in situ . Verification of the friction model under various process parameters is presented. Effects of pad conditioning and the wafer film topography on wafer/pad friction are experimentally demonstrated. Finally, several application examples are presented showing the use of the roller motor current measurement for real-time process monitoring and control.
Keywords :
chemical mechanical polishing; friction; integrated circuit manufacture; planarisation; process monitoring; CMP; chemical-mechanical planarization; friction coefficient; friction torques; process modeling; real time process monitoring; roller motor current measurement; shallow trench isolation; verification; wafer film topography; wafer/pad friction models; Atherosclerosis; Chemical processes; Current measurement; Friction; Monitoring; Planarization; Predictive models; Process design; Semiconductor device modeling; Surfaces; Chemical–mechanical planarization (CMP); friction; process modeling and monitoring; shallow trench isolation (STI);
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2005.852100
Filename :
1492452
Link To Document :
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