• DocumentCode
    1130220
  • Title

    On the influence of crystal orientation on solution-grown GaAs laser diodes

  • Author

    Beneking, H. ; Vits, W. ; Beneking, H. ; Vits, W.

  • Author_Institution
    Institut für Halbleitertechnik, Technische Hochschule Aachen, Germany
  • Volume
    4
  • Issue
    4
  • fYear
    1968
  • fDate
    4/1/1968 12:00:00 AM
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    Solution-grown GaAs p-n junctions were formed simultaneously using three differently oriented wafers, namely, the
  • Keywords
    Atomic beams; Crystalline materials; Diode lasers; Epitaxial growth; Gallium arsenide; P-n junctions; Pulse measurements; Substrates; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1968.1075071
  • Filename
    1075071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1130220