DocumentCode :
1130622
Title :
High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide
Author :
Wang, Q.J. ; Pflügl, C. ; Diehl, L. ; Capasso, F. ; Furuta, S. ; Kan, H.
Author_Institution :
Harvard Univ., Cambridge
Volume :
44
Issue :
8
fYear :
2008
Firstpage :
525
Lastpage :
526
Abstract :
Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 mum are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.
Keywords :
quantum cascade lasers; ridge waveguides; vapour phase epitaxial growth; air-semiconductor waveguide; laser optical mode; metal organic vapour phase epitaxy; optical overlap; power 1.3 W; quantum cascade lasers; temperature 300 K; waveguide losses reduction; wavelength 9.8 micron; wide ridge waveguide structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20080543
Filename :
4489880
Link To Document :
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