High-performance Mach-Zehnder modulators in multiple quantum well GaAs/AlGaAs

Author

Cites, Jeffrey S. ; Ashley, Paul R.

Volume

12

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1167

Lastpage

1173

Abstract

We demonstrate Mach-Zehnder interferometric waveguide intensity modulators which employ electrorefraction due to the quantum-confined Stark effect in multiple quantum well (MQW) GaAs/AlGaAs. These devices exhibit average half-wave voltage-length products as low as 3.0 V·mm and extinction ratios greater than 23.8 dB, which are superior to any MQW devices of this type. An effective index based model is developed to extract linear and quadratic electro-optic coefficients from the modulation data. Also, the power handling limitations of MQW modulators are discussed in terms of device performance and catastrophic electrical failure

Keywords

Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; light interferometers; optical communication equipment; optical waveguide components; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder interferometric waveguide intensity modulators; average half-wave voltage-length products; catastrophic electrical failure; device performance; effective index based model; electrorefraction; extinction ratios; linear electro-optic coefficients; multiple quantum well GaAs/AlGaAs; power handling limitations; quadratic electro-optic coefficients; quantum-confined Stark effect; Etching; Extinction ratio; Gallium arsenide; Indium phosphide; Intensity modulation; Missiles; Optical signal processing; Optical waveguides; Quantum well devices; Semiconductor materials;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.301809

Filename

301809