DocumentCode :
1130655
Title :
High-performance Mach-Zehnder modulators in multiple quantum well GaAs/AlGaAs
Author :
Cites, Jeffrey S. ; Ashley, Paul R.
Volume :
12
Issue :
7
fYear :
1994
fDate :
7/1/1994 12:00:00 AM
Firstpage :
1167
Lastpage :
1173
Abstract :
We demonstrate Mach-Zehnder interferometric waveguide intensity modulators which employ electrorefraction due to the quantum-confined Stark effect in multiple quantum well (MQW) GaAs/AlGaAs. These devices exhibit average half-wave voltage-length products as low as 3.0 V·mm and extinction ratios greater than 23.8 dB, which are superior to any MQW devices of this type. An effective index based model is developed to extract linear and quadratic electro-optic coefficients from the modulation data. Also, the power handling limitations of MQW modulators are discussed in terms of device performance and catastrophic electrical failure
Keywords :
Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; light interferometers; optical communication equipment; optical waveguide components; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder interferometric waveguide intensity modulators; average half-wave voltage-length products; catastrophic electrical failure; device performance; effective index based model; electrorefraction; extinction ratios; linear electro-optic coefficients; multiple quantum well GaAs/AlGaAs; power handling limitations; quadratic electro-optic coefficients; quantum-confined Stark effect; Etching; Extinction ratio; Gallium arsenide; Indium phosphide; Intensity modulation; Missiles; Optical signal processing; Optical waveguides; Quantum well devices; Semiconductor materials;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.301809
Filename :
301809
Link To Document :
بازگشت