Title :
GaAs0.5Sb0.5 lattice matched to InP for 1.55 μm photo-detection
Author :
Park, M.S. ; Jang, J.H.
Author_Institution :
Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
Photo-absorption characteristics of GaAs0.5Sb0.5 lattice-matched to InP substrate and the DC performance of GaAs0.5Sb0.5/InP pin photo- diodes are reported. The absorption coefficient of GaAs0.5Sb0.5 and the responsivity of the fabricated pin photodiodes were measured to be 6.8 times 103 cm-1 and 0.57 A/W under 1.55 mum radiation, respectively.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; photodetectors; photodiodes; photoexcitation; GaAs0.5Sb0.5; InP; absorption coefficient; photo-absorption characteristics; photo-detection; pin photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083433
