• DocumentCode
    1130772
  • Title

    GaAs0.5Sb0.5 lattice matched to InP for 1.55 μm photo-detection

  • Author

    Park, M.S. ; Jang, J.H.

  • Author_Institution
    Gwangju Inst. of Sci. & Technol., Gwangju
  • Volume
    44
  • Issue
    8
  • fYear
    2008
  • Firstpage
    549
  • Lastpage
    551
  • Abstract
    Photo-absorption characteristics of GaAs0.5Sb0.5 lattice-matched to InP substrate and the DC performance of GaAs0.5Sb0.5/InP pin photo- diodes are reported. The absorption coefficient of GaAs0.5Sb0.5 and the responsivity of the fabricated pin photodiodes were measured to be 6.8 times 103 cm-1 and 0.57 A/W under 1.55 mum radiation, respectively.
  • Keywords
    III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; photodetectors; photodiodes; photoexcitation; GaAs0.5Sb0.5; InP; absorption coefficient; photo-absorption characteristics; photo-detection; pin photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083433
  • Filename
    4489896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1130772