DocumentCode :
1131198
Title :
Current-injection induced dislocation networks in II-VI laser diodes: bottom-up structures emerging in top-down system
Author :
Ishibashi, A. ; Kondo, K.
Author_Institution :
Lab. of Quantum Electron., Hokkaido Univ., Japan
Volume :
40
Issue :
20
fYear :
2004
Firstpage :
1268
Lastpage :
1269
Abstract :
By controlling the location of staking faults and adjusting the amount of electron-hole injection in pn-junction, structural connection between a bottom-up structure of dislocations and a top-down structure of diodes can be made in a controlled manner. The possibility of uniting bottom-up structures with top-down system is demonstrated.
Keywords :
II-VI semiconductors; dislocation structure; electron-hole recombination; p-n junctions; semiconductor lasers; stacking faults; II-VI laser diodes; bottom up structures; current injection induced dislocation networks; electron-hole injection; p-n junction; staking faults; top-down system;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046226
Filename :
1342146
Link To Document :
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