DocumentCode :
1131207
Title :
Low-threshold and high-efficiency operation of 1.5 μm distributed reflector laser with DFB grating and Q-wire DBR sections
Author :
Ohira, K. ; Murayama, T. ; Hirose, M. ; Yagi, H. ; Tamura, S. ; Arai, S.
Author_Institution :
Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol., Japan
Volume :
40
Issue :
20
fYear :
2004
Firstpage :
1269
Lastpage :
1270
Abstract :
A low-threshold and high-efficiency distributed reflector laser consisting of active distributed feedback and quantum-wire distributed Bragg reflector sections has been demonstrated. A threshold current Ith as low as 2.5 mA ( jth=190 A/cm2), an external differential quantum efficiency from the front facet of 36%, and a submode suppression ratio of 54 dB at a bias current of twice the threshold current were obtained for an active section length of 300 μm with a stripe width of 4.4 μm.
Keywords :
Bragg gratings; III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.5 micron; 2.5 mA; 300 micron; 4.4 micron; DFB grating; GaInAsP-InP; Q-wire DBR; external differential quantum efficiency; high efficiency distributed reflector laser; high efficiency operation; low threshold laser; low-threshold operation; quantum wire distributed Bragg reflector; submode suppression;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046306
Filename :
1342148
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1131207
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