DocumentCode
1131258
Title
High Aspect Ratio Silicon Nanowire for Stiction Immune Gate-All-Around MOSFETs
Author
Han, Jin-Woo ; Moon, Dong-Il ; Choi, Yang-Kyu
Author_Institution
Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
30
Issue
8
fYear
2009
Firstpage
864
Lastpage
866
Abstract
A high aspect ratio silicon nanowire is proposed for a stiction immune gate-all-around (GAA) MOSFET on a bulk substrate with a fully CMOS compatible technology. Epitaxially grown SiGe serves as a sacrificial layer to yield a suspended nanowire structure. A high aspect ratio structure derived from an epitaxially grown thick-Si film provides a stiction immune property. The fabricated GAA device on a bulk substrate shows superior short-channel effects and improved drive current. In addition, an extremely long suspended nanowire structure can be implemented to a nand string composed of 64 or longer cells.
Keywords
MOSFET; epitaxial growth; nanowires; thick films; CMOS compatible technology; bulk substrate; epitaxial growth; high aspect ratio silicon nanowire; metal-oxide-semiconductor field effect transistors; stiction immune gate-all-around MOSFET; suspended nanowire structure; thick film; 3-D; Epitaxial growth; gate all around (GAA); nanowire; stiction free;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2024178
Filename
5161326
Link To Document