DocumentCode
1131352
Title
Low-Resistance Carbon Nanotube Contact Plug to Silicon
Author
Chai, Yang ; Xiao, Zhiyong ; Chan, Philip C.H.
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume
30
Issue
8
fYear
2009
Firstpage
811
Lastpage
813
Abstract
We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
Keywords
MOSFET; carbon nanotubes; thermal stability; Si MOSFET; Ti silicide contact layer; carbon nanotube; contact plug; cross-bridge Kelvin test structure; thermal stability; Carbon nanotube (CNT); contacts; interconnection; plug;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2024778
Filename
5161335
Link To Document