• DocumentCode
    1131352
  • Title

    Low-Resistance Carbon Nanotube Contact Plug to Silicon

  • Author

    Chai, Yang ; Xiao, Zhiyong ; Chan, Philip C.H.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • Volume
    30
  • Issue
    8
  • fYear
    2009
  • Firstpage
    811
  • Lastpage
    813
  • Abstract
    We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
  • Keywords
    MOSFET; carbon nanotubes; thermal stability; Si MOSFET; Ti silicide contact layer; carbon nanotube; contact plug; cross-bridge Kelvin test structure; thermal stability; Carbon nanotube (CNT); contacts; interconnection; plug;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2024778
  • Filename
    5161335