• DocumentCode
    1131427
  • Title

    GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 μm

  • Author

    Sidhu, R. ; Chen, H. ; Duan, N. ; Karve, G.V. ; Campbell, J.C. ; Holmes, A.L., Jr.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Microelectron. Res. Centre, Austin, TX, USA
  • Volume
    40
  • Issue
    20
  • fYear
    2004
  • Firstpage
    1296
  • Lastpage
    1297
  • Abstract
    A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs0.8Sb0.2 quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 μm.
  • Keywords
    III-V semiconductors; avalanche photodiodes; cavity resonators; dark conductivity; gallium arsenide; gallium compounds; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor quantum wells; 1.06 micron; GaAs; GaAs substrate; GaAs0.8Sb0.2 quantum wells; GaAs0.8Sb0.2-GaAs; GaAsSb absorbing region; GaAsSb resonant-cavity enhanced avalanche photodiode; MBE growth; dark current; device breakdown; full-width at half-maximum; peak quantum efficiency; resonant-cavity enhanced charge avalanche photodiode; resonant-cavity enhanced multiplication avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046147
  • Filename
    1342166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1131427