Title :
GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 μm
Author :
Sidhu, R. ; Chen, H. ; Duan, N. ; Karve, G.V. ; Campbell, J.C. ; Holmes, A.L., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Microelectron. Res. Centre, Austin, TX, USA
Abstract :
A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs0.8Sb0.2 quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 μm.
Keywords :
III-V semiconductors; avalanche photodiodes; cavity resonators; dark conductivity; gallium arsenide; gallium compounds; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor quantum wells; 1.06 micron; GaAs; GaAs substrate; GaAs0.8Sb0.2 quantum wells; GaAs0.8Sb0.2-GaAs; GaAsSb absorbing region; GaAsSb resonant-cavity enhanced avalanche photodiode; MBE growth; dark current; device breakdown; full-width at half-maximum; peak quantum efficiency; resonant-cavity enhanced charge avalanche photodiode; resonant-cavity enhanced multiplication avalanche photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046147
