DocumentCode :
1131433
Title :
High-power continuous-terahertz-wave generation using resonant-antenna-integrated uni-travelling-carrier photodiode
Author :
Nakajima, F. ; Furuta, T. ; Ito, H.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Volume :
40
Issue :
20
fYear :
2004
Firstpage :
1297
Lastpage :
1298
Abstract :
The fabrication of uni-travelling-carrier photodiodes with a resonant antenna for generating high-power continuous terahertz waves is reported. Enhancement of the output power is achieved at frequencies from 0.7 to 1.6 THz, and the maximum output power obtained at 1.04 THz is 10.9 μW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; photodiodes; submillimetre wave generation; 0.7 to 1.6 THz; 10.9 muW; InP-InGaAs; high power continuous terahertz wave generation; resonant antenna integrated unitravelling carrier photodiode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046431
Filename :
1342167
Link To Document :
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