Title :
High-power InGaN light emitting diodes grown by molecular beam epitaxy
Author :
Johnson, K. ; Bousquet, V. ; Hooper, S.E. ; Kauer, M. ; Zellweger, C. ; Heffernan, J.
Author_Institution :
Sharp Labs. of Eur. Ltd., Oxford, UK
Abstract :
The highest power InGaN light emitting diodes produced by molecular beam epitaxy are reported. When operated in continuous-wave mode at room temperature, the optical output power of the devices was 3.75 mW at a forward injection current of 20 mA, and the maximum output power was 14.3 mW. The electroluminescence had a peak at 405 nm and a full width half maximum of 15 nm. The electrical characteristics showed a voltage of 4.8 V and a resistance of 31 Ω at a forward injection current of 20 mA.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 14.3 mW; 20 mA; 293 to 298 K; 3.75 mW; 31 ohm; 4.8 V; 405 nm; InGaN; continuous-wave mode operation; electric resistance; electrical characteristics; electroluminescence; forward injection current; full width half maximum; high-power light emitting diodes; maximum output power; molecular beam epitaxy; optical output power; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046144
