DocumentCode
1131471
Title
Nonlinear absorption in a GaAs waveguide just above half the band gap
Author
Villeneuve, A. ; Yang, C.C. ; Stegeman, G.I. ; Ironside, C.N. ; Scelsi, G. ; Osgood, R.M.
Author_Institution
CREOL, Central Florida Univ., Orlando, FL, USA
Volume
30
Issue
5
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
1172
Lastpage
1175
Abstract
Nonlinear absorption in a GaAs waveguide is measured with photon energies near half the band-gap energy by employing single-beam and pump-probe attenuation techniques. Two-photon absorption followed by free-carrier absorption are the dominant nonlinear absorption mechanisms that are included in a model that fits the experimental data
Keywords
III-V semiconductors; energy gap; gallium arsenide; integrated optics; light absorption; nonlinear optics; optical pumping; optical waveguides; GaAs; GaAs waveguide; band gap; band-gap energy; dominant nonlinear absorption mechanisms; free-carrier absorption; nonlinear absorption; photon energies; pump-probe attenuation techniques; single-beam; two-photon absorption; Absorption; Attenuation; Gallium arsenide; Laser excitation; Photonic band gap; Probes; Refractive index; Semiconductor waveguides; Solid lasers; Waveguide discontinuities;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.303676
Filename
303676
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