InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Author

Katz, O. ; Mistele, D. ; Meyler, B. ; Bahir, G. ; Salzman, J.

Author_Institution

Dept. of Electr. Eng., Israel Inst. of Technol., Haifa, Israel

Volume

40

Issue

20

fYear

2004

Firstpage

1304

Lastpage

1305

Abstract

InAlN/GaN based HFETs are demonstrated, which allow us to engineer polarisation induced charges. The In_xAl_1-xN/GaN heterostructures were grown with x=0.04 to x=0.15. Measured 2DEG Hall mobility was 480 and 750 cm²/Vs at 300K and 10K, respectively, and carrier concentration reached 4×10¹³ cm^-2 at room temperature. The threshold voltage and peak transconductance shifted towards positive gate values, as well as a decrease in the drain current with In content increase. This change originates from polarisation difference reduction between GaN and InAlN. The 0.7 μm gate device had f_t and f_max of 11 and 13 GHz, respectively.

Keywords

Hall mobility; III-V semiconductors; MOCVD; aluminium compounds; carrier density; gallium compounds; indium compounds; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 0.7 micron; 10 K; 11 GHz; 13 GHz; 293 to 298 K; 2DEG Hall mobility; 300 K; InAlN-GaN; InAlN/GaN based HFET; InAlN/GaN heterostructure field-effect transistor; carrier concentration; drain current; polarisation induced charge; room temperature; small-signal characteristics; threshold voltage; transconductance shift;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20045980

Filename

1342183