Title :
A low-voltage, high-reflectance-change normally off refractive GaAs/Al0.2Ga0.8As MQW reflection modulator
Author :
Lin, Chih-Hsiang ; Meese, Jo M. ; Chang, Yia-Chung
Author_Institution :
Dept. of Electr. & Comput. Eng., Missouri Univ., Columbia, MO, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
We present our optimization of a normally off refractive GaAs/Al xGa1-xAs multiple-quantum-well (MQW) reflection modulator with respect to the on/off reflectance change, on/off contrast ratio, and operating voltage. We use optical transfer matrices, theoretically calculated refractive indices, and absorption coefficients to simulate the operation of a normal-incident Fabry-Perot MQW modulator. Our calculations suggest that a normally off refractive GaAs/Al0.2Ga0.8As MQW reflection modulator with a reflectance change of 42.9% and an on/off contrast ratio of 1539 for an operating voltage of only 2.44 V can be fabricated by molecular-beam epitaxy (MBE)
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; reflectivity; semiconductor quantum wells; 2.44 V; GaAs-AlGaAs; GaAs/Al0.2Ga0.8As; GaAs/AlxGa1-xAs; MBE; absorption coefficients; high-reflectance-change; low-voltage; molecular-beam epitaxy; normal-incident Fabry-Perot MQW modulator; normally off; on/off contrast ratio; on/off reflectance change; operating voltage; optical transfer matrices; optimization; reflectance change; refractive MQW reflection modulator; refractive indices; Absorption; Gallium arsenide; Molecular beam epitaxial growth; Optical modulation; Optical reflection; Optical refraction; Optical variables control; Quantum well devices; Reflectivity; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
