Title :
MOSFET thermal noise modeling for analog integrated circuits
Author :
Wang, Bing ; Hellums, James R. ; Sodini, Charles G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
The effects of device geometry, oxide thickness, and bias condition on the thermal noise of MOSFET´s are investigated. The experimental results show that the conventional MOSFET thermal noise models do not accurately predict the thermal noise of MOSFET´s. A model that is capable of predicting the thermal noise of both long and short channel devices in both the triode and saturation regions is presented. This model, which can be easily implemented into existing circuit simulators such as SPICE, has been verified by a wide variety of measurements
Keywords :
MOS integrated circuits; SPICE; circuit analysis computing; insulated gate field effect transistors; linear integrated circuits; semiconductor device models; semiconductor device noise; thermal noise; MOSFET; SPICE; analog integrated circuits; bias condition; circuit simulators; device geometry; long channel devices; oxide thickness; saturation region; short channel devices; thermal noise modeling; triode region; Analog integrated circuits; Circuit noise; Circuit simulation; Geometry; Integrated circuit modeling; Integrated circuit noise; MOSFET circuits; Predictive models; Semiconductor device noise; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
