Design and evaluation of a high-precision, fully tunable OTA-C bandpass filter implemented in GaAs MESFET technology

Author

Visocchi, Pasqualino ; Taylor, John ; Mason, Richard ; Betts, Andrew ; Haigh, David

Author_Institution

BNR Europe, Harlow, UK

Volume

29

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

840

Lastpage

843

Abstract

A second-order bandpass filter employing the operational transconductance amplifier-capacitor (OTA-C) method and featuring independent tuning of center frequency and Q is described. The filter, which is realized in 0.5-μm GaAs MESFET technology, is intended for use in high-precision, continuous-time (CT) IF bandpass filtering applications requiring both accurate amplitude and group delay responses. The filter center frequency is tunable in the range 12-50 MHz, Q is tunable in the range 4-60, and a transfer function accuracy of the order of 1% is achieved throughout the tuning range. Active area is 1 mm² and static power consumption is 230 mW

Keywords

Q-factor; Schottky gate field effect transistors; active filters; band-pass filters; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; radiofrequency filters; tuning; 0.5 micron; 12 to 50 MHz; 230 mW; GaAs; GaAs MESFET technology; OTA-capacitor method; Q-factor tuning; RF filter; VHF; center frequency tuning; continuous-time filter; operational transconductance amplifier; second-order bandpass filter; tunable OTA-C bandpass filter; Band pass filters; Delay; Filtering; Frequency; Gallium arsenide; MESFETs; Operational amplifiers; Transconductance; Transfer functions; Tuning;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.303724

Filename

303724