Title :
Design and evaluation of a high-precision, fully tunable OTA-C bandpass filter implemented in GaAs MESFET technology
Author :
Visocchi, Pasqualino ; Taylor, John ; Mason, Richard ; Betts, Andrew ; Haigh, David
Author_Institution :
BNR Europe, Harlow, UK
fDate :
7/1/1994 12:00:00 AM
Abstract :
A second-order bandpass filter employing the operational transconductance amplifier-capacitor (OTA-C) method and featuring independent tuning of center frequency and Q is described. The filter, which is realized in 0.5-μm GaAs MESFET technology, is intended for use in high-precision, continuous-time (CT) IF bandpass filtering applications requiring both accurate amplitude and group delay responses. The filter center frequency is tunable in the range 12-50 MHz, Q is tunable in the range 4-60, and a transfer function accuracy of the order of 1% is achieved throughout the tuning range. Active area is 1 mm2 and static power consumption is 230 mW
Keywords :
Q-factor; Schottky gate field effect transistors; active filters; band-pass filters; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; radiofrequency filters; tuning; 0.5 micron; 12 to 50 MHz; 230 mW; GaAs; GaAs MESFET technology; OTA-capacitor method; Q-factor tuning; RF filter; VHF; center frequency tuning; continuous-time filter; operational transconductance amplifier; second-order bandpass filter; tunable OTA-C bandpass filter; Band pass filters; Delay; Filtering; Frequency; Gallium arsenide; MESFETs; Operational amplifiers; Transconductance; Transfer functions; Tuning;
Journal_Title :
Solid-State Circuits, IEEE Journal of
