High-Power Quantum-Dot Superluminescent LED With Broadband Drive Current Insensitive Emission Spectra Using a Tapered Active Region

Author

Zhang, Z.Y. ; Hogg, R.A. ; Jin, P. ; Choi, T.L. ; Xu, B. ; Wang, Z.G.

Author_Institution

Univ. of Sheffield, Sheffield

Volume

20

Issue

10

fYear

2008

fDate

5/15/2008 12:00:00 AM

Firstpage

782

Lastpage

784

Abstract

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Keywords

self-assembly; semiconductor quantum dots; superluminescent diodes; broad-area device; broadband drive current insensitive emission spectra; etched V groove structure; high-power quantum-dot superluminescent LED; light-emitting diodes; molecular beam epitaxy; power 100 mW; self-assembled quantum dots; tapered active region; tapered angled pump region; Bandwidth; Etching; Light emitting diodes; Molecular beam epitaxial growth; Optical pumping; Optical sensors; Power generation; Quantum dots; Superluminescent diodes; Temperature; Molecular beam epitaxy (MBE); quantum dots (QDs); superluminescent light-emitting diodes (SLEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.921108

Filename

4490028