DocumentCode :
113234
Title :
Modeling and performance analysis of Germanium based p-i-n solar cells
Author :
Chowdhury, Farhan Shadman ; Taraque, Asif Reza
Author_Institution :
Dept. of Electr., Electron. & Commun. Eng., Mil. Inst. of Sci. & Technol., Dhaka, Bangladesh
fYear :
2014
fDate :
10-12 April 2014
Firstpage :
1
Lastpage :
5
Abstract :
This paper concentrates on the modeling of a Germanium based p-i-n solar cell and analyze the performance of it at different doping concentrations, light intensity and temperature. In this paper a virtual structure of Germanium based p-i-n solar cell was modeled and then a major analysis was done to increase the efficiency of the highly demanding solar cell by changing one of the most important parameters: the doping concentration of the p and n type Germanium doping. The doping concentration of the p-type i.e. the acceptor Germanium has been kept constant and the doping concentration of the donor atom were changed to find the performance of the solar cell. This analysis gives an excellent result with a maximum efficiency of 26.04% and a fill factor of 89.63%.
Keywords :
doping; germanium; solar cells; Ge; donor atom; doping concentrations; fill factor; germanium based p-i-n solar cells; solar cell performance; Analytical models; Charge carrier processes; Doping; Germanium; P-i-n diodes; PIN photodiodes; Photovoltaic cells; Doping Concentration; Efficiency; Fill Factor; Germanium; Modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4820-8
Type :
conf
DOI :
10.1109/ICEEICT.2014.6919151
Filename :
6919151
Link To Document :
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