Title :
Use of self bias to improve power saturation and intermodulation distortion in CW class B HBT operation
Author :
Teeter, Douglas A. ; East, Jack R. ; Haddad, George I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
It is shown that a DC base bias circuit can be used to control the RF performance of a heterojunction bipolar transistor (HBT) operating under CW conditions near class B mode. By a careful choice of base bias resistance, gain can be linearized, output power at 1-dB gain compression increased, and intermodulation distortion reduced. Measurements performed on HBTs biased near class B operation showed a 10-dB improvement in 1-dB gain compression point and a 10-dB reduction in intermodulation distortion for moderate power levels. Results for various values of DC base resistance for a typical HBT are presented.<>
Keywords :
heterojunction bipolar transistors; intermodulation; solid-state microwave devices; CW class B HBT operation; CW conditions; DC base bias circuit; IMD; heterojunction bipolar transistor; intermodulation distortion; power saturation; self bias; Circuits; Distortion measurement; Electrical resistance measurement; Gain measurement; Heterojunction bipolar transistors; Intermodulation distortion; Performance evaluation; Power generation; Power measurement; Radio frequency;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
