Top-down approach for fabricating InP nanowires with ohmic metal contacts

Author

Naureen, S. ; Shahid, N. ; Vora, K. ; Lysevych, M. ; Tan, H.H. ; Jagadish, C. ; Karouta, F.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

3

Lastpage

5

Abstract

Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl₂/H₂/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.

Keywords

III-V semiconductors; electron beam lithography; elemental semiconductors; germanium; gold; indium compounds; nanofabrication; nanolithography; nanowires; nickel; ohmic contacts; semiconductor growth; semiconductor-metal boundaries; sputter etching; Ge-Ni-Au-InP; Ohmic metal contacts; anisotropic inductively coupled plasma reactive ion etching; electrical contacts; electron beam lithography; nanowire arrays; top-down approach; Etching; Fabrication; Indium phosphide; Iterative closest point algorithm; Metals; Nanowires; Plasmas; ICP etching I-V characteristics; nanopillars/nanowires; ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038636

Filename

7038636