Electron interference and spin transport in nanowire structures

Author

Schapers, Thomas

Author_Institution

Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Julich, Germany

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

18

Lastpage

20

Abstract

Electron interference effects and spin transport are investigated in semiconductor nanowires. In InAs bulk nanowires, grown by molecular beam epitaxy, the phase coherence length is determined by analyzing universal conductance fluctuations. Information on spin-orbit scattering is obtained by employing the weak antilocalization effect. In GaAs/InAs core/shell nanowires magnetic flux periodic oscillations are observed in the conductance under application of an axially oriented magnetic field. These oscillations are explained by the presence of quantized closed-loop states in the InAs shell.

Keywords

III-V semiconductors; core-shell nanostructures; electrical conductivity; fluctuations; gallium arsenide; indium compounds; magnetic flux; molecular beam epitaxial growth; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; spin polarised transport; spin-orbit interactions; GaAs-InAs; antilocalization effect; axially oriented magnetic field; conductance fluctuations; core-shell nanowires; electron interference effects; magnetic flux periodic oscillations; molecular beam epitaxy; phase coherence length; quantized closed-loop states; semiconductor nanowires; spin transport; spin-orbit scattering; Gallium arsenide; Magnetic cores; Magnetic separation; Nanoscale devices; Oscillators; Scattering; Temperature measurement; III-V semiconductors; magneto-transport; nanowires; spin-orbit coupling;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038640

Filename

7038640